Tuesday, May 27, 2008

Method of fabricating memory device utilizing carbon nanotubes

United States Patent 7,378,328 Choi, et al., May 27, 2008


A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

Inventors: Choi; Won-bong (Yongin, KR), Yoo; In-kyeong (Suwon, KR), Chu; Jae-uk (Gwangmyeong, KR)

Assignee: Samsung Electronics Co., Ltd. (Suwon, Kyungki-do, KR)


I'm all for it - the more the merrier - Keesmann agrees, I hope.

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