Tuesday, August 19, 2008
ITRI US patent - looks like Spindt tips formed of CNT paste
70A = CNT paste pyramidal formation
30 = imprint negative mold
From the patent:
Subsequently, the imprint negative mold 30 dipped with the CNT paste which are mixed with appreciate (sic appropriate) concentration of CNT, silver powder, and organic bonding agent. As is shown in FIG. 6, the CNT paste 70A will be imprinted on the predetermined pixels so as to form emitting sources 80, and the CNT paste 70B in the trenches (the reverse pattern of pillar 20) will not touch with the gate lines 60.
Referring to FIG. 7, a removal of the imprint negative mold 30 is performed.
United States Patent 7,413,763
Chao , et al. August 19, 2008
Method of fabricating carbon nanotube field emission source
A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.
Inventors: Chao; Ching-Hsun (Kaohsiung, TW), Sheu; Jyh-Rong (Hsinchu, TW), Chiang; Liang-Yu (Taipei Hsien, TW), Chang; Yu-Yang (Tainan, TW), Lee; Cheng-Chung (Taitung, TW)
Assignee: Industrial Technology Research Institute (Hsinchu, TW)
Appl. No.: 10/706,907
Filed: November 14, 2003
BTW, I think this ITRI development (read Taiwan/China) will give that FET-Sony (read Japan) nano-Spindt metal tips FED a run for the money! IMHHO, of course.
And...could this ITRI development be what Da Ling was/is waiting for!!!!????