Sony-FET FEDs

17 are the Spindt tips >>>>>>>>>>>>>>>>>>Click pics for enlarged view

21 are the CNTs

I looked Sony's US patents up and found this US patent 7,329,978 :
[SNIPS]
Specifically, the carbon-nanotube structure includes a carbon-nanotube and/or a carbon-nanofiber. More specifically, the electron-emitting portion may be constituted of a carbon-nanotube, it may be constituted of a carbon-nanofiber, or it may be constituted of a mixture of a carbon-nanotube with a carbon-nanofiber. Macroscopically, the carbon-nanotube and carbon-nanofiber may have the form of a powder or a thin film. The carbon-nanotube structure may have the form of a cone in some cases. The carbon-nanotube and carbon-nanofiber can be produced or formed by a known PVD method as an arc discharge method and a laser abrasion method; and any one of various CVD methods such as a plasma CVD method, a laser CVD method, a thermal CVD method, a gaseous phase synthetic method and a gaseous phase growth method.
....
In the plane-type field emission device, as a material for constituting an electron-emitting portion, particularly, carbon is preferred. More specifically, diamond, graphite and a carbon-nanotube structure are preferred.
......
The method of manufacturing the Spindt-type field emission device will be explained below with reference to FIGS. 17A, 17B, 18A and 18B which are schematic partial end views of the supporting member 10, etc., constituting a cathode panel.

The above Spindt-type field emission device can be obtained basically by a method in which the conical electron-emitting portion 17 is formed by vertical vapor deposition of a metal material. That is, while deposition particles perpendicularly enter the opening portion 16A formed through the focus electrode 15, the amount of deposition particles reaching the bottom portion of the opening portion 16 is gradually decreased by utilizing a masking effect produced by an overhanging deposit formed around the edge of opening of the opening portion 16A, and the electron-emitting portion 17, which is a conical deposit, is formed in a self-alignment manner. There will be explained below a method in which a peeling-off layer 19A is formed on the focus electrode 15 beforehand for making it easy to remove an unnecessary overhanging deposit. In the drawings for explaining the method of manufacturing a field emission device, one electron-emitting portion alone is shown.
.....
An electron-emitting portion 17A comprises a matrix 20 and a carbon-nanotube structure (specifically, a carbon-nanotube 21) embedded in the matrix 20 in a state where the toportion of the carbon-nanotube structure is projected, and the matrix 20 is made of an electrically conductive metal oxide (specifically, indium-tin oxide, ITO). [See Fig. 20 - no cones! But vertically arranged CNTs are aligned across the bottom of the emitter chamber in matrix 20]

From Sony's US patent 7,329,978:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7329978.PN.&OS=PN/7329978&RS=PN/7329978

So - the cone emitters can be molded entirely from CNTs! Or the emitters may be CNTs in a planar layer at the bottom of the emitter well. We will see what this amazing FED display actually contains some day! I have no doubts myself that CNTs are at the heart of it!!!!

See also United States Patent Application 20070196564

Scaled fabrication of single-nanotube-tipped ends from carbon nanotube micro-yarns and their field emission applications

Yang Wei et al 2008 Nanotechnology 19 475707 (5pp) doi: 10.1088/0957-4484/19/47/475707

	PDF (1.05 MB) | References

Yang Wei, Liang Liu, Peng Liu, Lin Xiao, Kaili Jiang and Shoushan Fan
Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, People's Republic of China
E-mail: liuliang@tsinghua.edu.cn

Abstract. Joule-heating-induced electrical breakdown was applied to break suspended carbon nanotube (CNT) micro-yarns. The yarn ends at the breaking points were well-shaped sharp tips and mostly terminated by a single nanotube. The uppermost CNT was approximately 5 nm in diameter and was firmly compacted with the CNTs below it, yielding better mechanical, electrical and thermal contacts. An individual end could provide an emission current of approximately 25 µA, with potential application as a point electron source. In addition, we developed a pixel structure for a field emission display using oppositely aligned ends as the cathode and gate, respectively.

Print publication: Issue 47 (26 November 2008)
Received 14 July 2008, in final form 27 September 2008
Published 30 October 2008

Source

Figure 5. (a) Sketch of the transfer of a CNT end onto a tungsten probe. (b) Optical micrograph of an as-fabricated CNT emitter. (c) Illustration of the field emission testing method using a tungsten probe as the anode with a 100 μm gap. (d) Schematic illustration of the lateral CNT-based pixel for an FED. (e) A lit pixel of the suggested structure. (f) Field emission properties of the as-fabricated CNT ends. The inset shows the FN curve. (g) I–V curve of the coplanar cathode and gate, demonstrating that the cathode ends start emitting electrons at approximately 60 V. The inset shows the electron emission efficiency, which is >60%.

From the "Full text" noted above:

The gap between two breaking ends of a CNT micro-yarn is approximately 2 μm, as shown in figure 1(e). The small gap between sharp tips suggests that it is possible to initiate field emission at low voltage using one end as the electron emitter and the other as the gate electrode. A specimen was fabricated from a 1 mm wide MWCNT sheet and experiments demonstrated that the field emission threshold voltage was only approximately 60 V, as shown in figure 5(g). On the basis of the low threshold voltage, we suggest a new pixel for FEDs that is schematically illustrated in figure 5(d). The pixel uses the CNT ends on each side of the small gap as the cathode emitter and gate electrode, respectively. The pixel was fabricated from a 1 mm wide MWCNT sheet by electrical breakdown. A piece of ITO glass coated with a layer of green cathode ray phosphor was placed at a distance of 2 mm away as the anode. The pixel could be effectively turned on and off by the gate in the voltage range 80–100 V when the anode voltage was set to 1 kV. The lit pixel (Vg = 100 V) is shown in figure 5(e). The emission efficiency (current collected by the anode divided by the emission current from the cathode, Ia/Ic) of such a structure is plotted in the inset of figure 5(g), and is >60%.
.....
A lateral CNT cathode and gate would greatly simplify the fabrication process for FEDs. CNT emitters in a conventional FED are vertically aligned on the cathode plate, and their alignment requires extra surface treatment processes [23–25]. The gate electrodes are on top of the CNT cathode and separated from it by an insulating layer of precise thickness. Both the vertical alignment and the cathode’s 3D structure are difficult to realize in conventional thin film processes. In the suggested FED, the complicated 3D structures are simplified to a planar structure, which is easy to fabricate. It is also beneficial that both sides of the broken yarn are composed of sharp CNT ends and can be used as electron emitters. The planar cathode is similar to SEDs [8, 26, 27], but the emission efficiency is much higher. In a surface-conduction electron emitter, electron emission arises from discontinuous conducting films that are composed of isolated islands. The electric field between the isolated islands leads to the tunnel effect, and electrons are transferred at the discontinuous thin film surface. Usually, only a small proportion of the electrons can escape from the surface and fly to the anode. Wang et al reported that the electron emission efficiency of their SED was approximately 2% [8]. This low emission efficiency limits practical SED applications owing to large conduction currents and high power consumption. Our suggested FED not only has the planar structure of SEDs, but also has much higher emission efficiency. The latest progress on lateral CNT-based FEDs in our laboratory has demonstrated that both MWCNT sheets and the shrunk yarn can be made into planar FED structures using electrical breakdown and screen-printing technology. This is encouraging, and implies that the suggested FED is feasible and might be realized in the near future.

My comments:
As shown in Fig. 5(d) the left side CNT is the emitter and the right side CNT is the gate - the gap therebetween reminding me of a SED gap and clearly noted as such by the authors in the extract above. And the emission efficiency for the CNT planar FED of 60% compares quite favorably to SED's rather puny 2%.

A self-aligned single carbon nanotube field emission source fabricated by UV lithography

Click Pic To ENLARGE
Figure 5. SEM images of (a), (b) the gated carbon nanotube field emission source, where only one carbon nanotube grew per gate aperture
and was aligned at the center automatically, and (c) gate apertures with a 10 μm pitch.

Sewan Park et al 2008 Nanotechnology 19 445304 (7pp) doi: 10.1088/0957-4484/19/44/445304

	PDF (1.68 MB) | References

Sewan Park^1,2, Hyeon Cheol Kim³, Min Hyung Yum⁴, Ji Hoon Yang⁴, Chong Yun Park⁴, Kukjin Chun^1,2 and Bose Eom^1,2
1 School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Republic of Korea
² Inter-university Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea
³ School of Electrical Engineering, University of Ulsan, Daehakro 102, Nam-gu, Ulsan, 680-749, Republic of Korea
⁴ Department of Physics, Sungkyunkwan University, Chunchun-dong 300, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Republic of Korea
E-mail: kchun@.snu.ac.kr and durian@mintlab.snu.ac.kr (K Chun)

Abstract. We suggest a novel process for fabricating a carbon nanotube field emission source having one carbon nanotube per gate aperture. The fabrication is based on UV lithography, instead of electron beam lithography. We used only one patterning step to define the gate, insulator, and cathode. We applied a DC voltage to the anode and a pulse signal to the gate. We then investigated the I–V characteristics of the structure, changing the frequency and the duty-cycle of the pulse signal applied to the gate. We found that the optimum frequency and duty-cycle were 250 kHz and 22%, respectively. The structure had a turn-on voltage of 1.1 V under these conditions. The anode voltage did not have much effect. Finally, we checked the stability of the source for 40 h. We obtained an average emission current of 1.093 µA with a standard deviation of 1.019 × 10^-2 µA.

Print publication: Issue 44 (5 November 2008)
Received 17 June 2008, in final form 27 August 2008
Published 26 September 2008

Source

ITRI US patent - looks like Spindt tips formed of CNT paste

70A = CNT paste pyramidal formation
30 = imprint negative mold

From the patent:
Subsequently, the imprint negative mold 30 dipped with the CNT paste which are mixed with appreciate (sic appropriate) concentration of CNT, silver powder, and organic bonding agent. As is shown in FIG. 6, the CNT paste 70A will be imprinted on the predetermined pixels so as to form emitting sources 80, and the CNT paste 70B in the trenches (the reverse pattern of pillar 20) will not touch with the gate lines 60.

Referring to FIG. 7, a removal of the imprint negative mold 30 is performed.

United States Patent 7,413,763
Chao , et al. August 19, 2008

Method of fabricating carbon nanotube field emission source

Abstract

A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.

Inventors: Chao; Ching-Hsun (Kaohsiung, TW), Sheu; Jyh-Rong (Hsinchu, TW), Chiang; Liang-Yu (Taipei Hsien, TW), Chang; Yu-Yang (Tainan, TW), Lee; Cheng-Chung (Taitung, TW)

Assignee: Industrial Technology Research Institute (Hsinchu, TW)
Appl. No.: 10/706,907
Filed: November 14, 2003
Source

BTW, I think this ITRI development (read Taiwan/China) will give that FET-Sony (read Japan) nano-Spindt metal tips FED a run for the money! IMHHO, of course.

And...could this ITRI development be what Da Ling was/is waiting for!!!!????

A Japanese company - FET - promises FED panel mass production by late 2009

Yoichiro Hata EE Times (08/06/2008 2:53 PM EDT) TOKYO — FE Technologies, a Japanese R&D firm spun out of Sony in 2006, announced that the company is poised to mass produce 26-inch FED panels by the end of 2009. The company is focused on the development of Field Emission Display (FED). Compared with other flat panel technologies such as LCDs and plasma displays, FED has long been known for its superior characteristics. They include: a higher contrast ratio, lower power consumption and wider viewing angle. Charles Spindt at Stanford Research Institute developed the principles of FED in 1968. Despite all of its advantages, FED has one big drawback: its manufacturability. Nobody has been able to mass produce FED as a video display, due to a number of technical issues. They include problems related to a structure of filed emitters and difficulty of attaining high vacuum levels required by FEDs. The Japanese company claims to have found solutions to the mass production problem. Principles of FE Technologies' FED Field emission displays are similar to CRTs. Instead of a single electron gun, FE Technologies' FED uses a large array of cone-shaped electrodes, called "Spindt." Many Spindts positioned behind each phosphor dot emit electrons through a process known as field emission. By charging 9kV electro differentials between anode and cathode substrates, electrons are generated and light up fluorescent material located in front of anode substrate. Electron generation is controlled by gate electrode. Spindt structure uses the field emission principle, which generates electron into air-vacuumed region at room temperature. There is no need for heating, said the company, as it leverages Tunnel effect. Self discharge between emitter and gate electrode is blocked by placing resistance layer. Conventional type of Spindt is structured by one Spindt per pixel. Therefore, size of each Spindt needs to be exactly identical. Otherwise, brightness of each pixel becomes uneven, thus lowering image quality. FE Technologies evened Spindt differentials by placing multiple numbers of Spindts, called Nano-Spindt Structure. "1,400 Spindts are required to keep pixel brightness differentials within 2 percent," said Hiroyuki Ikeda, general manager of marketing at F. E. Technologies. By implementing this structure, electric current per Spindt has decreased and life of Spindt itself has improved, according to the company. Sony spin-off FE Technologies was founded by investment from Sony and a few other companies. The mission of the company is to investigate FED business opportunity, said Shohei Hasegawa, FE Technologies President and C.E.O. "Idea of becoming independent was triggered by successful development of spacer materials," he explained. FED requires a high vacuum level. Spacer material which holds its shape between anode and cathode substrate against the air pressure is necessary. "We needed to develop electrically transparent material, which neither charges itself nor becomes conductive, but can maintain an electro field between anode and cathode " in parallel." In time for the FED panel mass production in late 2009, FE Technologies is scheduled to acquire Pioneer's Kagoshima plant before the end of 2008. The Japanese company will invest $183 million to $274 million (20 to 30 billion yen) in manufacturing equipment. FE Technologies will use the company's fourth generation glass substrate (730mm x 920mm). Each substrate will allow them to produce a pair of 26-inch panels. The company will proceed with the mass production of FED panels by using 5,000 glass substrates per month. The initial application for FE Technologies' 26-inch FED panels will be "master" monitors, used at TV broadcasting stations, to check picture quality. Neither LCDs nor PDPs are said to satisfy the high quality standard required by such master monitors. — Yoichiro Hata is managing editor of EE Times Japan. Source Does the Nano-Spindt Structure include CNTs? I do not know - perhaps - 1400 points per pixel is getting nano, indeed, and nothing is more nano than CNTs! We will have to see when they are sold whether they contain CNTs or not.

Samsung - United States Patent 7,372,194 - Moon, May 13, 2008

Electron emission source composition for flat panel display and method of producing electron emission source for flat panel display using the same

Abstract

Disclosed is an electron emission source composition for a flat panel display using the same, comprising carbon nanotubes, a vehicle, and an organotitanium or an organometallic compound, and a method of producing the electron emission source composition having improved adherent strength with the substrate and providing stable and uniform electron emitting characteristics.

Inventors: Moon; Jong-Woon (Busan, KR)
Assignee: Samsung SDI Co., Ltd. (Suwon, KR)

What is claimed is:

1. A flat panel comprising: a substrate; an electrode formed on the substrate; and an electron emission source layer formed on the electrode, a surface of the layer having micro-cracks in a range of about 0.1 .mu.m to about 100 .mu.m, wherein the electron emission source layer comprises: carbon nanotubes; a vehicle; and an organotitanium crack formation compound or an organometallic crack formation compound.

2. The flat panel of claim 1, wherein the carbon nanotubes are present in a range of 5 wt % and 80 wt %, and the organotitanium crack formation compound or the organometallic crack formation compound is present in a range of 20 wt % and 95 wt %.

http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7,372,194.PN.&OS=PN/7,372,194&RS=PN/7,372,194

Kinda reminds me at first glance (!!) of a combination of SED and CNT, cracks and C nanotubes in those micro-cracks - between 0.1 and 100 mu.m across (X by 1000 to get nm).

Moon me!

Samsung rules!!

Polynano carbon nanotube field emission device

Polynano Glass---( Nano Moving Display Glass )

Polynano carbon nanotube field emission device (CNT-FED) features perfect flat outer screen surface, flat rear screen, very thin thickness, high beam current output of carbon Nanotube emission cathode, circle phosphor dot screen anode, monochrome output, see-through type , wide-environmental operation application. Monochrome display and image interface application.

Snipped from here:
http://www.glassonweb.com/articles/artic...

Finally something to generate some royalty revenue for Keesmann and ANHI (Applied Nanotech Holdings Inc.)=(Nano-Proprietary - NNPP)!

Long time coming but welcomed with open arms and pocketbooks.

Ya think? ;-) Surely Bijou is all over this like a hawk in heat.

OTOH.............???????

Just in case NOT here are the company particulars:
Polytron Technologies, Inc.
http://www.polytron.com.tw/company.php?l...

Polytron Technologies Inc. is a subsidiary of Polytronix, Inc.:
http://www.polytronix.com/
http://www.polytron.com.tw/
http://www.polytron.com.tw/product_small...
Polytron Technologies, Inc.
330 No.67, Taode Road., Taoyuan City, 330, Taiwan
Tel：+886-3-3712958 FAX：+886-3-3712968
sam@polytron.com.tw

POLYTRONIX INC.

Contact Information

805 Alpha Drive
Richardson, Texas 75081-2861

Toll Free: 1-800-904-7045
Phone: 972-238-7045
Fax: 972-644-0805

For technical and engineering questions,
contact: engineering@polytronix.com

For product information and availability,
contact: sales@polytronix.com

POLYTRONIX INC. URL:

http://www.polytronix.com/contacts.htm

TEXAS, eh!!!!

Howdy, pardner.

Copper Nanowires Grown By New Process Create Long-lasting Displays

Magnified optical image produced by a proof-of-principle copper nanowire-based field-emission display activated in a vacuum-sealed chamber. (Credit: Photo courtesy Kyekyoon Kimrr)

ScienceDaily (Apr. 28, 2008) — A new low-temperature, catalyst-free technique for growing copper nanowires has been developed by researchers at the University of Illinois. The copper nanowires could serve as interconnects in electronic device fabrication and as electron emitters in a television-like, very thin flat-panel display known as a field-emission display.

"We can grow forests of freestanding copper nanowires of controlled diameter and length, suitable for integration into electronic devices," said Kyekyoon (Kevin) Kim, a professor of electrical and computer engineering.

"The copper nanowires are grown on a variety of surfaces, including glass, metal and plastic by chemical vapor deposition from a precursor," said Hyungsoo Choi, a research professor in the Micro and Nanotechnology Laboratory and in the department of electrical and computer engineering. "The patented growth process is compatible with contemporary silicon-processing protocols."

The researchers describe the nanowires, the growth process, and a proof-of-principle field-emission display in a paper accepted for publication in the journal Advanced Materials, and posted on its Web site.

Typically, the nanowires of 70 to 250 nanometers in diameter are grown on a silicon substrate at temperatures of 200 to 300 degrees Celsius and require no seed or catalyst. The size of the nanowires is controlled by the processing conditions, such as substrate, substrate temperature, deposition time and precursor feeding rate. The columnar, five-sided nanowires terminate in sharp, pentagonal tips that facilitate electron emission.

To demonstrate the practicability of the low-temperature growth process, the researchers first grew an array of copper nanowires on a patterned silicon substrate. Then they fashioned a field-emission display based on the array's bundles of nanowires.

In a field-emission display, electrons emitted from the nanowire tips strike a phosphor coating to produce an image. Because the researchers used a bundle of nanowires for each pixel in their display, the failure of a few nanowires will not ruin the device.

"The emission characteristics of the copper nanowires in our proof-of-principle field-emission display were very good," said Kim, who also is affiliated with the U. of I.'s department of materials science and engineering, department of bioengineering, department of nuclear, plasma and radiological engineering, Beckman Institute, Micro and Nanotechnology Laboratory, and the Institute for Genomic Biology. "Our experimental results suggest bundled nanowires could lead to longer lasting field-emission displays."

In addition to working on flexible displays made from copper nanowires grown on bendable plastic, the researchers are also working on silver nanowires.

With Kim and Choi, co-authors of the paper are graduate student and lead author Chang Wook Kim, graduate student Wenhua Gu, postdoctoral research associate Martha Briceno, and professor and head of materials science and engineering Ian Robertson.

Funding was provided by the University of Illinois. Characterization of the samples was conducted at the university's Center for Microanalysis of Materials, which is partially funded by the U.S. Department of Energy.

Adapted from materials provided by University of Illinois at Urbana-Champaign.

Samsung USP 7,365,482, April 29, 2008 - CNT FED

United States Patent	7,365,482
Ryu , et al.	April 29, 2008

---

Field emission display including electron emission source formed in multi-layer structure

Abstract

A field emission display includes first and second substrates provided opposing one another with a predetermined gap therebetween; electron emission sources provided on one of the first and second substrates; an electron emission inducing assembly for inducing the emission of electrons from the electron emission sources; and an illuminating assembly provided on the substrate on which the electron emission sources are not formed, the illuminating assembly realizing images by the emission of electrons from the electron emission sources. The electron emission sources include a carbon nanotube layer and a base layer, the base layer connecting the carbon nanotube layer to the substrate and applying a voltage to the carbon nanotube layer required for the emission of electrons. Also, the carbon nanotube layer is provided on the base layer in a state substantially un-mixed with the base layer.

---

Inventors:	Ryu; Mee-Ae (Suwon, KR), Kim; Hun-Young (Seoul, KR), Nam; Joong-Woo (Suwon, KR)
Assignee:	Samsung SDI Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
Appl. No.:	10/684,520
Filed:	October 15, 2003

What is claimed is:

1. A field emission display, comprising: first and second substrates provided opposing one another with a predetermined gap therebetween to form a vacuum assembly; electron emission sources provided on one of the first and second substrates; an electron emission inducing assembly inducing the emission of electrons from the electron emission sources; and an illuminating assembly provided on the other one of the first and second substrates not including the electron emission sources being formed, the illuminating assembly realizing images by the emission of electrons from the electron emission sources, with the electron emission sources including a carbon nanotube layer and a base layer, said base layer having an outer surface that includes prominences and depressions, the base layer formed between the carbon nanotube layer and the one of the first and second substrates on which the electron emission sources are provided and having conductibility for applying a voltage to the carbon nanotube layer required for the emission of electrons, the carbon nanotube layer comprising a plurality of carbon nanotubes, and with the base layer having a predetermined thickness, and the carbon nanotube layer being provided on the base layer in a state substantially un-mixed with the base layer, the carbon nanotubes formed on both of the prominences and the depressions, wherein the base layer comprises: an adhesive material realized through a glass frit that selected from the group consisting of PbO, SiO.sub.2, Ba.sub.2O.sub.3, and a mixture thereof; and a metal conductive material selected from the group consisting of silver, copper, and aluminum.

Source

Stable field emission from arrays of vertically aligned free-standing metallic nanowires

Stephane Xavier et al 2008 Nanotechnology 19 215601 (7pp) doi: 10.1088/0957-4484/19/21/215601

	PDF (1.61 MB) | References

Stephane Xavier^1,5, Stefan Mátéfi-Tempfli², Etienne Ferain³, Stephen Purcell⁴, Shaïma Enouz-Védrenne¹, Laurent Gangloff¹, Eric Minoux¹, Ludovic Hudanski¹, Pascal Vincent⁴, Jean-Philippe Schnell¹, Didier Pribat¹, Luc Piraux² and Pierre Legagneux^1,5
1 Nanocarb Laboratory, Thales—Ecole Polytechnique, Route Départementale 128, 91767 Palaiseau, France
² Unité de Physico-Chimie et de Physique des Matériaux, Croix du sud 1, B-1348 Louvain-la-Neuve, Belgium
³ Unité de Physique et de Chimie des Hauts Polymères, Croix du sud 1, B-1348 Louvain-la-Neuve, Belgium
⁴ Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Claude Bernard de Lyon 1, CNRS UMR 5586, 43 Blvd du 11 Novembre 1918, 69622 Villeurbanne, France
⁵ Authors to whom any correspondence should be addressed
E-mail: stephane.xavier@thalesgroup.com and pierre.legagneux@thalesgroup.com

Abstract. We present a fully elaborated process to grow arrays of metallic nanowires with controlled geometry and density, based on electrochemical filling of nanopores in track-etched templates. Nanowire growth is performed at room temperature, atmospheric pressure and is compatible with low cost fabrication and large surfaces. This technique offers an excellent control of the orientation, shape and nanowires density. It is applied to fabricate field emission arrays with a good control of the emission site density. We have prepared Co, Ni, Cu and Rh nanowires with a height of 3 µm, a diameter of 80 nm and a density of ~10⁷ cm^-2. The electron field emission measurements and total energy distributions show that the as-grown nanowires exhibit a complex behaviour, first with emission activation under high field, followed by unstable emission. A model taking into account the effect of an oxide layer covering the nanowire surface is developed to explain this particular field emission behaviour. Finally, we present an in situ cleaning procedure by ion bombardment that collectively removes this oxide layer, leading to a stable and reproducible emission behaviour. After treatment, the emission current density is ~1 mA cm^-2 for a 30 V µm^-1 applied electric field.

Print publication: Issue 21 (28 May 2008)
Received 28 January 2008, in final form 13 March 2008
Published 21 April 2008

PDF (1.61 MB) | References

Source

Conclusion from PDF:
4. Conclusion
In conclusion, metallic nanowires grown in supported
nanoporous track-etched templates are a competitive solution
for the realization of field emission displays (FEDs) or
backlight units for liquid crystal displays. The growth
process is performed at room temperature and atmospheric
pressure, and is compatible with very large surfaces. With
this process, we have obtained nanowires made of different
materials (Co, Ni, Cu and Rh). The field emission and total
energy distribution measurements have shown that, because
of the presence of an oxide layer observed by TEM on asgrown
nanowire surfaces, emission activation is necessary
and the emission is unstable in that case. We propose here
an in situ treatment with ion bombardment to collectively
‘clean’ the nanowire array and eliminate this oxide layer.
After this in situ treatment, the NWs exhibit a stable and
reproducible emission. Activation is no longer required. We
have observed a good emission stability for several hours. This
process can be potentially used for field emission displays,
as the achieved current density is compatible with such an
application.

United States Patent 7,348,274 - Samsung

Method of aligning carbon nanotubes and method of manufacturing field emission device using the same

Abstract

A method of aligning carbon nanotubes (CNTs) and a method of manufacturing a field emission device (FED) using the same, wherein a mold having an intaglio pattern is prepared, an aqueous solution containing an amphiphilic organic material and the CNTs are coated on a surface of a substrate, the mold is adhered to the substrate surface to cause the aqueous solution to flow into the intaglio pattern by a capillary force, and the mold is removed from the substrate surface to vertically align the CNTs on the substrate surface.

---

Inventors:	Chung; Deuk-Seok (Seongnam-si, KR), Oh; Tae-Sik (Suwon-si, KR), Bae; Min-Jong (Anyang-si, KR)
Assignee:	Samsung SDI Co., Ltd. (Suwon-si, Gyeonggi-do, KR)
Appl. No.:	11/225,174
Filed:	September 14, 2005

Link

Sony/Patents/Nanowire/FED/CNT/Display

1)
United States Patent Application
20080067915

Ishida; Takehisa ; et al.

March 20, 2008
Electron emitter and a display apparatus utilizing the same

Abstract

A field effect electron emitting apparatus using nano-wire electron emitters is disclosed where each nano-wire electron emitter may be grown in a pore of an insulating layer and/or may have at least a portion exposed from the pore. A method of manufacturing a field effect electron emitting apparatus is also disclosed. The field effect electron emitting apparatus may be used in a display.

Claims
1. A field effect electron emitting apparatus comprising a cathode, an insulating layer on or adjacent to the cathode having an array of pores, and a grown nano-wire electron emitter in each pore, each nano wire electron emitter connected to the cathode.

26. A field effect display comprising a field effect electron emitting apparatus as claimed in claim 1, and a phosphor coated screen on or spaced parallel to the field effect electron emitting apparatus.

Inventors:
Ishida; Takehisa; (Singapore, SG) ; Ng; Wei B.; (Singapore, SG)

Assignee Name and Adress:
Sony Corporation
Tokyo
JP

http://tinyurl.com/yq4jgd

2)
United States Patent Application 20080067912

Ishida; Takehisa
March 20, 2008
Electron emitter and a display apparatus utilizing the same

Abstract

A field effect electron emitting apparatus is disclosed comprising an insulating layer having an array of pores, each pore has at least one nano-wire electron emitter which is shorter than the pore and/or each pore may have a plurality of nano-wire electron emitters. A method of manufacturing a electron emitting array is also disclosed. The field effect electron emitting apparatus may be used in a display.
Inventors: Ishida; Takehisa; (Singapore, SG)

Assignee Name and Adress:
Sony Corporation
Tokyo
JP

Claims
1. A field effect electron emitting apparatus comprising a cathode, an insulating layer on or adjacent to the cathode having an array of pores, at least one nano-wire electron emitter within each pore, each nano-wire electron emitter being shorter than the pore and connected to the cathode, and a gate electrode on or adjacent to the insulating layer.

2. A field effect electron emitting apparatus comprising a cathode, an insulating layer on or adjacent to the cathode having an array of pores, a plurality of nano-wire electron emitters in each pore connected to the cathode, a gate electrode on or adjacent to the insulating layer.

3. A field effect electron emitting apparatus comprising a cathode, an insulating layer on or adjacent to the cathode having an array of pores, at least one electron emitter within each pore, each electron emitter being shorter than the pore and connected to the cathode, a gate electrode on or adjacent to the insulating layer, and a secondary electron emission (SEE) layer on the sidewall of each pore.

4. The electron emitting apparatus as claimed in claim 1 wherein each nano-wire is a carbon nano-tube (CNT).

http://tinyurl.com/35e5os

Sony, god love 'em, they make Canon look like amateurs and will bury SED!!

CNTs are THE future of displays - Sony has spoken...and when Sony speaks, I listen. What was that last bit, Sony??...."Buy NNPP!!!"......???

(WO/2008/034080) SMOKE DETECTOR

Publication Number: WO/2008/034080 International Application No.: PCT/US2007/078530 Publication Date: 20.03.2008 International Filing Date: 14.09.2007
Int. Class.:	C12M 3/00 (2006.01)
Applicants:	NANO-PROPRIETARY, INC. [US/US]; 3006 Longhorn Blvd., Suite 107, Austin, TX 78758 (US) (All Except US). FINK, Richard, Lee [US/US]; 9306 Rolling Oaks Trail, Austin, TX 78750 (US) (US Only).
Inventor:	FINK, Richard, Lee [US/US]; 9306 Rolling Oaks Trail, Austin, TX 78750 (US).
Agent:	KORDZIK, Kelly, K.; Fish & Richardson P.C., P.O. Box 1022, Minneapolis, MN 55440-1022 (US).
Priority Data:	60/844,761 15.09.2006 US 60/891,927 27.02.2007 US 60/941,858 04.06.2007 US

Title:	SMOKE DETECTOR
Abstract:	A smoke detector replaces the americium source of alpha particles with a field emission device using carbon nanotubes as the field emitters, or some other field emitter, in order to provide an ionization of the air potentially caring[sic carrying] smoke particles through the smoke detector.
Designated States:	AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. African Regional Intellectual Property Org. (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW) Eurasian Patent Organization (EAPO) (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM) European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR) African Intellectual Property Organization (OAPI) (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).

Publication Language:	English (EN)
Filing Language:	English (EN)

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