Figure 5. SEM images of (a), (b) the gated carbon nanotube field emission source, where only one carbon nanotube grew per gate aperture
and was aligned at the center automatically, and (c) gate apertures with a 10 μm pitch.
Sewan Park et al 2008 Nanotechnology 19 445304 (7pp) doi: 10.1088/0957-4484/19/44/445304
1 School of Electrical Engineering, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Republic of Korea
2 Inter-university Semiconductor Research Center, Seoul National University, 599 Gwanangno, Gwanak-gu, Seoul 151-742, Republic of Korea
3 School of Electrical Engineering, University of Ulsan, Daehakro 102, Nam-gu, Ulsan, 680-749, Republic of Korea
4 Department of Physics, Sungkyunkwan University, Chunchun-dong 300, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Republic of Korea
E-mail: kchun@.snu.ac.kr and firstname.lastname@example.org (K Chun)
Abstract. We suggest a novel process for fabricating a carbon nanotube field emission source having one carbon nanotube per gate aperture. The fabrication is based on UV lithography, instead of electron beam lithography. We used only one patterning step to define the gate, insulator, and cathode. We applied a DC voltage to the anode and a pulse signal to the gate. We then investigated the I–V characteristics of the structure, changing the frequency and the duty-cycle of the pulse signal applied to the gate. We found that the optimum frequency and duty-cycle were 250 kHz and 22%, respectively. The structure had a turn-on voltage of 1.1 V under these conditions. The anode voltage did not have much effect. Finally, we checked the stability of the source for 40 h. We obtained an average emission current of 1.093 µA with a standard deviation of 1.019 × 10-2 µA.
Print publication: Issue 44 (5 November 2008)
Received 17 June 2008, in final form 27 August 2008
Published 26 September 2008