United States Patent 7,378,328 Choi, et al., May 27, 2008
Abstract
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.
Inventors: Choi; Won-bong (Yongin, KR), Yoo; In-kyeong (Suwon, KR), Chu; Jae-uk (Gwangmyeong, KR)
Assignee: Samsung Electronics Co., Ltd. (Suwon, Kyungki-do, KR)
http://tinyurl.com/56r5a3
I'm all for it - the more the merrier - Keesmann agrees, I hope.
Showing posts with label magnetic memory. Show all posts
Showing posts with label magnetic memory. Show all posts
Tuesday, May 27, 2008
Large-capacity magnetic memory using carbon nano-tube
United States Patent 7,379,326 Ushida,et al., May 27, 2008
[[Note - Is this CNT emitting? If it is Keesmann applies! It could be big!!!]]
Abstract
A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
Inventors: Ushida; Takashi (Furukawa, JP), Mori; Nobuyuki (Furukawa, JP), Kamijo; Yoshimi (Furukawa, JP), Okazaki; Akihiro (Furukawa, JP), Mitsuzuka; Akira (Furukawa, JP), Hatakeyama; Rikizou (Furukawa, JP), Ido; Hideaki (Furukawa, JP), Nakajima; Ko (Furukawa, JP), Takoshima; Takehiro (Furukawa, JP)
Assignee: UMK Technologies Co., Ltd. (Furukawa-shi, JP)
The nano-magnetic probe 30 is disposed in opposed relation to the perpendicular magnetization film 50 through a micro-gap G, and the space S therebetween is sealed in a vacuum or depressurized state. If the conditions for generating a micro-discharge are satisfied, the space may be maintained under an inert atmosphere instead of the depressurized state. [[Sounds like electron emission is present!]]
http://tinyurl.com/4t5yd4
If this is as big as I think it is or could/will be, it could be worth a pretty penny to us and Keesmann. Don't ya think? Then again it might just be another disappointment - we can handle those!!!!!! We are used to it. ;-)
Refs:
http://www.wipo.int/pctdb/en/wo.jsp?wo=2004001851
http://www.freepatentsonline.com/EP1533846.html
[[Note - Is this CNT emitting? If it is Keesmann applies! It could be big!!!]]
Abstract
A high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50, and a reading/writing bit-line conductor 41, a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50. A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
Inventors: Ushida; Takashi (Furukawa, JP), Mori; Nobuyuki (Furukawa, JP), Kamijo; Yoshimi (Furukawa, JP), Okazaki; Akihiro (Furukawa, JP), Mitsuzuka; Akira (Furukawa, JP), Hatakeyama; Rikizou (Furukawa, JP), Ido; Hideaki (Furukawa, JP), Nakajima; Ko (Furukawa, JP), Takoshima; Takehiro (Furukawa, JP)
Assignee: UMK Technologies Co., Ltd. (Furukawa-shi, JP)
The nano-magnetic probe 30 is disposed in opposed relation to the perpendicular magnetization film 50 through a micro-gap G, and the space S therebetween is sealed in a vacuum or depressurized state. If the conditions for generating a micro-discharge are satisfied, the space may be maintained under an inert atmosphere instead of the depressurized state. [[Sounds like electron emission is present!]]
http://tinyurl.com/4t5yd4
If this is as big as I think it is or could/will be, it could be worth a pretty penny to us and Keesmann. Don't ya think? Then again it might just be another disappointment - we can handle those!!!!!! We are used to it. ;-)
Refs:
http://www.wipo.int/pctdb/en/wo.jsp?wo=2004001851
http://www.freepatentsonline.com/EP1533846.html
Subscribe to:
Posts (Atom)